Цена по запросу
4KB Random Read
160000 IOPS4KB Random Write
135000 IOPSCapacity
1.6 TBТехническое описание P12114-B21
| Device Type | Solid state drive - internal |
| Capacity | 1.6 TB |
| NAND Flash Memory Type | Multi-level cell (MLC) |
| Form Factor | 2.5" SFF |
| Interface | PCI Express x4 (NVMe) |
| Features | Digitally Signed Firmware |
| Drive Writes Per Day (DWPD) | 5 |
| SSD Endurance | 14600 TB |
| Internal Data Rate | 3400 MBps (read) / 1900 MBps (write) |
| 4KB Random Read | 160000 IOPS |
| 4KB Random Write | 135000 IOPS |
| Power Consumption | 6.2 Watt (idle) ¦ 10 Watt (random read) ¦ 10 Watt (random write) ¦ 13.7 Watt (sequential read) ¦ 14.9 Watt (sequential write) ¦ 10 Watt (random read/write) ¦ 15 Watt (maximum) |
Характеристики
4KB Random Read
160000 IOPS
4KB Random Write
135000 IOPS
Capacity
1.6 TB
Device Type
Solid state drive - internal
Drive Writes Per Day (DWPD)
5
Features
Digitally Signed Firmware
Form Factor
2.5" SFF
Interface
PCI Express x4 (NVMe)
Internal Data Rate
3400 MBps (read) / 1900 MBps (write)
NAND Flash Memory Type
Multi-level cell (MLC)
Power Consumption
6.2 Watt (idle) ¦ 10 Watt (random read) ¦ 10 Watt (random write) ¦ 13.7 Watt (sequential read) ¦ 14.9 Watt (sequential write) ¦ 10 Watt (random read/write) ¦ 15 Watt (maximum)
SSD Endurance
14600 TB
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